document number: 94537 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 24-jul-08 1 high performance schottky generation 5.0, 10 a mbr10t100 vishay high power products features ? 175 c high performance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? full lead (pb)-free and rohs compliant devices ? designed and qualified for industrial level applications ? high efficiency smps ? automotive ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc-to-dc systems ? increased power density systems product summary i f(av) 10 a v r 100 v v f at 10 a at 125 c 0.68 v anode 1 3 cathode to-220ac base cathode rohs compliant major ratings and characteristics symbol characteristics values units v rrm 100 v v f 10 apk, t j = 125 c (typical) 0.62 t j range - 55 to 175 c voltage ratings parameter symbol test conditions mbr10t100 units maximum dc reverse voltage v r t j = 25 c 100 v absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 159 c, rectangular waveform 10 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 850 a 10 ms sine or 6 ms rect. pulse 200 non-repetitive avalanche energy e as t j = 25 c, i as = 3 a, l = 12 mh 54 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse see fig. 8 i as at t j max. a
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94537 2 revision: 24-jul-08 mbr10t100 vishay high power products high performance schottky generation 5.0, 10 a note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units forward voltage drop per leg v fm (1) 10 a t j = 25 c -0.79 v 20 a - 0.88 10 a t j = 125 c -0.68 20 a - 0.8 reverse leakage current per leg i rm (1) t j = 25 c v r = rated v r - 100 a t j = 125 c - 4 ma junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 400 - pf series inductance per leg l s measured lead to lead 5 mm from package body 8.0 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 2 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ac mbr10t100
document number: 94537 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 24-jul-08 3 mbr10t100 high performance schottky generat ion 5.0, 10 a vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.0 0.5 1.0 1.5 1 10 100 tj = 25c tj = 125c tj = 175c reverse current - i r (ma) reverse voltage - v r (v) 020406080100 0.0001 0.001 0.01 0.1 1 10 100 75c 100c 50c 125c 150c 175c 25c reverse voltage - v r (v) junction capacitance - c t (pf) 0 20 40 60 80 100 120 10 100 1000 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94537 4 revision: 24-jul-08 mbr10t100 vishay high power products high performance schottky generation 5.0, 10 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 2 4 6 8 10 12 14 16 150 155 160 165 170 175 180 dc square wave (d=0.50) 80% rated vr applied see note (1) average forward current - i f (av) (a) average power loss - (watts) 0 3 6 9 12 15 0 3 6 9 180 120 90 60 30 dc rms limit square wave pulse duration - t p (microsec) non-repetitive surge current - i fsm (a) 10 100 1000 10000 100 1000
document number: 94537 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 24-jul-08 5 mbr10t100 high performance schottky generat ion 5.0, 10 a vishay high power products fig. 8 - reverse bias safe o perating area (avalanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (a valanche energy vs. rectangular pulse duration) 0 0 1 0 1 1 1 10 100 tj = 25c tj = 125c rectangular pulse duration ( sec) avalanche current (a) 0 0 1 0 1 1 1 10 100 tj = 25c tj = 125c rectangular pulse duration ( sec) avalanche energy (mj)
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94537 6 revision: 24-jul-08 mbr10t100 vishay high power products high performance schottky generation 5.0, 10 a ordering information table 1 - mbr series 2 - current rating (10 = 10 a) 3 - t = trench 4 - voltage rating (100 = 100 v) tube standard pack quantity: 50 pieces device code 13 24 mbr 10 t 100 links to related documents dimensions http://www.vishay.com/doc?95221 part marking information http://www.vishay.com/doc?95224
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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